Gamma−ray spectroscopy with single−carrier collection in high−resistivity semiconductors
نویسندگان
چکیده
منابع مشابه
Positron Spectroscopy of Defects in Semiconductors
At a vacant lattice cell positron-ion repulsion is reduced leading to positron trapping. This causes observable changes in annihilation characteristics: the positron lifetime increases and the positron-electron momentum distribution narrows. Positron trapping in semiconductors is analogous to carrier capture. Due to the long-range Coulomb interaction, the charge state of a vacancy has a strong ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1975
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.88158